Abstract
Permeation of atomic hydrogen in ion implant-damaged Si has been studied. Ar was implanted at two distinct doses so as to straggle the amorphization threshold, and atomic hydrogen was subsequently introduced by low-energy ion implantation. The deactivation of dopant boron atoms by atomic hydrogen is drastically reduced in p-type silicon wafers subjected to low-energy argon ion implantation. Similar results have been seen when B is substituted for Ar as the implant species, thus suggesting the universality of this damage-induced suppression of deactivation. Trapping of hydrogen in defect sites generated by argon implant and possibly, the formation of molecular hydrogen in the implanted region apparently hinder hydrogen permeation into the Si bulk.
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