Study of low-temperature sol–gel processed In-doped ZnO for organic photovoltaics

Abstract

This article studies low-temperature sol–gel processed indium (In)-doped ZnO (IZO) for highly efficient organic photovoltaics (OPVs). Contrary to the prior research trends adopting doped sol–gel processed ZnO with an annealing temperature of over 400 °C for the hydrolysis reaction, IZO with an annealing temperature of 200 °C is studied. Similar to the high-temperature solvent system, it is elucidated that low-temperature sol–gel processed IZO effectively improves the performance of OPVs, increasing the power conversion efficiency from 6.80% to 7.35%. For further analyses, the current–voltage (J–V) characteristics and ideality factors (n) are examined as a function of In doping ratios, which revealed that In doping on ZnO effectively reduces trap-assisted recombination within devices.