Abstract
AbstractFor the first time, high‐frequency phonon scattering has been used to study ion implantation damage in silicon wafers. Diffusive scattering of reflected heat pulses was found to be greatly increased by self implantation at a dose of 1015 cm−2, which is known to produce an amorphous layer. Subsequent low‐temperature (250°C) annealing produced a reduction in scattering which could be attributed to smoothing of the amorphous–crystalline (a–c) interface, i.e. to a reduction in the short‐wavelength components of the interface roughness.
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