Abstract
Abstract In this study, the indium tin oxide (ITO) was used as a sensitive film for H + ion sensitive field effect transistor (ISFET). The sensitive characteristics of ITO glass structure for separative extended gate ion sensitive field effect transistors (EGFET) were studied. ITO thin film is used for the first time as a H + ion sensitive film which has a linear pH sensitivity of Nerstern response, about 58 mV/pH, between pH 2 and pH 12.
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