Abstract
Cu〈111〉 single crystals were implanted with 150 keV argon ions at temperatures between 5 and 300 K and analysed in-situ by α-particle channeling in a backscattering geometry. At all temperatures similar damage ranges were observed, which exceed the TRIM-estimate approximately four times. Ranges did not change during warming up, but the defect density changed significantly in the case of the 5 K implantation. The observations are in disagreement with a simple point defect migration process as interstitial atoms become mobile only above 45 K. Possible mechanisms to explain these results are discussed. Furthermore some room temperature measurements of damage ranges in gold and silver single crystals are also given.
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