Abstract

The output properties of hydrogen light sources and the resist parameters, such as spectral sensitivity and absorption coefficient, in the vacuum-ultraviolet (VUV) region were investigated. A very low exposure energy of about 1 mJ/cm2 was obtained by employing a very thin polymethyl methacrylate film and the VUV light of hydrogen microwave discharge. Contact photolithography using a Si/MgF2 mask and a trilayer resist system showed that submicron patterns as small as 0.2 µm had been replicated at an exposure time of under 30 s.

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