Abstract
Abstract Angle dependent resonant soft X-ray reflectivity (R-SoXR) measurements in the energy range (82.67–206.7 eV) were performed on PECVD grown amorphous hydrogenated silicon nitride (a-SiN x :H) thin films of different compositions near the Si– L 2,3 edge (∼100 eV). The compositional difference is reflected in the optical density ( δ ) of the two films. It is demonstrated that R-SoXR can non-destructively distinguish between the compositional variations through the depth of a given thin film, whereby it becomes possible to differentiate between the growth kinetics of the films prepared under different conditions. The compositions determined from R-SoXR, are in qualitative agreement with those determined from Rutherford back scattering (RBS) and elastic recoil detection analysis (ERDA).
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