Abstract

We performed detailed analysis of Ni silicide discontinuities induced by agglomeration that causes the increasing electric resistance in high-performance CMOS devices by using advanced physical analysis techniques. We confirmed that the agglomeration of the Ni silicide is related to elongated-triangular- shaped-splits - which we call delta-shaped-splits-which cause discontinuities that occur at small-angle grain boundaries pinned by boron clusters even with small stress. We successfully determined the formation mechanism of the Ni silicide discontinuities in detail. It is essential to develop a highly reliable Ni salicide process, especially for 45 nm node high performance devices and beyond.

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