Abstract
Abstract Applying Barkhausen effect, changes in the activation energy of domain wall motion in ferroelectric ageing are studied for TGS crystals grown in paraelectric phase. Barkhausen pulse field distributions are reported for Cu2+ doped TGS crystals (6.8 · 10−2 and 10−4 wt% in the crystal) and related with defect-induced changes in domain structure and wall clamping.
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