Abstract
Diamond nucleation and growth on Ti6Al4V substrates with tungsten (W) interlayers were investigated using hot filament chemical vapor deposition (HFCVD). W interlayers were firstly deposited on Ti6Al4V substrates under different conditions by sputtering and diamond was then deposited on W-coated Ti6Al4V using the same HFCVD reactor. X-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy, atomic force microscopy, Raman spectroscopy, synchrotron near-edge X-ray absorption fine structure spectroscopy and Rockwell C indentation tests were used for characterization. The effect of thickness and surface morphology of W interlayer on the nucleation, growth, and adhesion of diamond on the Ti alloy was investigated. The results show that the pre-deposited W interlayers act as a diffusion barrier for carbon, and thus significantly enhancing the nucleation of diamond. In addition, the W interlayer reacts with carbon to form WC and W2C during the diamond deposition, thus enhancing the adhesion of diamond on Ti6Al4V.
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