Abstract
Computational calculation of energy loss and damage profiles when implanted by arsenic ions on amorphous germanium during ion implantation had been carried out. The required energies for doping of arsenic ion on germanium, in order to obtain maximum damage at 600 Å, were calculated using SRIM. These ions when implanted on germanium causes the production of germanium recoils, vacancy-interstitial pairs, and phonons during the collision process. For 140 keV arsenic ion, the energy consumption for ionization, phonon production and vacancies creation are 39.634 keV (28.31% of incident energy), 90.888 keV (64.92% of incident energy) and 9.478 keV (6.77% of incident energy), respectively. The amount of target displacement, replacement collisions and vacancies were also evaluated. Doping of arsenic ions on germanium also revealed that the energy loss due to nuclear stopping was greater than electronic stopping. Significantly, surface hardness and electrical conductivity on germanium cannot be improved with calculated energies.
 BIBECHANA 17 (2020) 96-103
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
