Abstract
Several chelating agents in silicon polishing slurries were studied about their effects on copper adhesion to the surface of silicon wafer. The copper contamination level on the Si wafer surface was measured with GFAAS. The results indicate that PAA and HEDP for acid slurries can reduce 80% copper contamination with respect to the situation of without chelating agent. EDTA, the most common chelating agent for alkaline slurries, has no predominant compared with FA/O and AEEA. The copper contamination on Si wafer surface can reduce nearly 50% by adding EDTA while the addition of FA/O or AEEA in the same concentration for alkaline slurries can reach more than 70% reduction of copper contamination level.
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