Abstract
AbstractThe thermal diffusion of Al in ZnTe has been studied by using secondary ion mass spectroscopy. The relationships between the diffusion coefficient and the Al concentration were determined from Al depth profiles by a Boltzmann–Matano analysis. The diffusion coefficient depends on the Al concentration and it becomes large at the high doping level, probably due to the increase of Zn vacancy concentration attributed to the self‐compensation effect. As a result of decrease in the diffusion coefficient at low Al concentration, a rapid decrease in the Al concentration was observed at the diffusion front. This would lead to the formation of highly abrupt p–n junctions, resulting in the fabrication of ZnTe light emitting diode with better performance. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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