Abstract
In this work, we have studied and simulated of electrical and optical properties The of InAs/InGaAs quantum dot in-a-well (DWELLs) long-wave infrared photodetector (IP). The effect of number and thickness of InAs quantum dot (QD) layers, as well as the InGaAs quantum well (QW) width on the quantum dot infrared photodetector (QDIPs) performance has been investigated. Our results have been shown that 30 quantum dots of 7 nm thickness and 6 nm well width give optimal values for responsivity, detectivity and noise equivalent power with values of 1.285 A/W, 7.66 * 1012 cm Hz1/2 W−1 and 10−11 W, respectively. In addition, the wavelength ranges detected in the same structure are medium infrared (4.47 µm), long infrared (11.47 µm) and very long infrared (22.08 µm) wavelength, respectively. These results confirm that InAs/InGaAs DWELL infrared photodetector performances are more sensitive to the structure geometry as well as their intrinsic parameters.
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