Studies of turn-off effects in power semiconductor devices

Abstract

An analytical model has been developed for analyzing current and voltage transients during high power diode recovery. Using the charge control approach and approximating the excess charge distribution by simple geometrical curves a fast and convenient method for computer analysis is obtained. The model is thoroughly physical and makes use of the proper diode design parameters and the differential equations of the electrical network. There is no need for any experimental fitting parameter. All relevant complicating effects as emitter recombination, nonabrupt pn-junction and reverse current influence on the space-charge layer are considered. Comparisons between calculated and measured recovery behavior under several different conditions show good agreement and prove that the model may serve as a useful tool in device and circuit development including RC-snubber design. Furthermore, the calculated charge distribution varies during the recovery in a physically reasonable manner. Starting from measured recovery transients this model may also be used as a new method for determining the excess charge content in the diode at the beginning of the recovery phase.