Abstract
AbstractSpectroscopic studies have been carried out on the quantum levels in GaInNAs/GaAs single quantum wells (SQWs). Photoluminescence (PL), PL excitation (PLE), photoreflectance (PR), and high‐density‐excited PL (HDE‐PL) were measured on high quality GaInNAs SQWs, Ga0.65In0.35N0.01As0.99/GaAs (well thickness: l z = 10 nm) and Ga0.65In0.35N0.005As0.995/GaAs (l z = 3∼10 nm), grown by molecular‐beam epitaxy. For Ga0.65In0.35N0.01As0.99/GaAs (l z = 10 nm), PL at 8 K exhibited a peak at 1.07 eV due to the exciton‐related transition between quantum levels of ground states (e1–hh1). Both PR and PLE exhibited three transitions (1.17, 1.20 and 1.32 eV), and the former two transitions were assigned to as either of e1–lh1 and e2–hh2 transitions, while the transition at 1.32 eV was assigned to as the e2–lh2 transition. For HDE‐PL, a new PL peak was observed at about 1.2 eV, and it was assigned to the unresolved e1–lh1 and e2–hh2 transitions. Similar optical measurements have been done on the Ga0.65In0.35N0.005As0.995/GaAs with various l z (3∼10 nm). Dependence of optical spectra and energies of quantum levels on l z have been studied. It has been found that HDE‐PL in combination with PLE is a good tool for the study of the quantum level of GaInNAs SQW. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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