Abstract
Phosphorus doped diamond-like carbon (DLC) films have been deposited on Si substrates using CH4-based RF plasmas with addition of 0–21% PH3 into the source gas mixture. Scanning Auger studies reveal that the films contain P:C ratios as high as 0.89, and that the degree of P incorporation is roughly proportional to the PH3 concentration in the gas phase. Reduction in intensity and finally loss of the laser Raman G-band with increasing P content in the film shows that excessive P incorporation causes amorphisation of the film. The electronic properties of the films, such as field emission threshold and optical band gap, are a complicated function of film composition. Minimum field emission thresholds occur at P:C ratios of around 0.02, and voltage bias values ∼30% lower than that for the undoped film. Annealing in vacuum at 150°C can improve the field emission threshold of the low P content films by a factor of four.
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