Abstract
Ultrafast carrier dynamics of bandtail states in an unintentionally doped gallium nitride sample was investigated using femtosecond transient transmission measurements. The transient responses of shallow bandtail states resemble those of above band gap extended states. The transient responses of the deep bandtail states are, on the other hand dominated by carrier transfer into the lower energy states through phonon assisted tunneling suggesting that the deep bandtail states are localized states.
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