Abstract
A variety of Al-rich Al-N and stoichiometric AlN films with different structures, including Al+AlN, amorphous AlN, polycrystalline AlN, have been made by a sputter method at room temperature. AES, XPS, XRD and TEM have been used to investigate the composition, the ratio of metallic Al to nitrided Al, the structure and two-phase coexistence morphology for various Al-N films respectively, which have been found to be strongly dependent on the total sputtering pressure and content of nitrogen gas. The Al-N films obtained can be classified into three categories, that is, the Al-rich metallic films with a positive temperature coefficient of resistivity (TCR), the Al-rich semiconducting films with a negative TCR and the stoichiometric insulating films. The current-voltage curves of Al-rich Al-N films are presented. The metallic conduction and semiconductor conduction are two main electrical conduction mechanisms for the various Al-rich Al-N films.
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