Abstract
In this paper, ZnO films were deposited onto flexible polyimide substrate by spraying suspension containing nanocrystals synthesized by polyol method. Afterward, ZnO films were annealed at 200–400 °C for 10–60 min. X-ray diffraction (XRD) technique, scanning, transmission electron and atomic force microscopy, Fourier-transform infrared (FTIR) spectroscopy were used to study the dependencies of phase composition, texture quality, coherent scattering domain (CSD) sizes, microdeformations, microstresses, dislocation densities, lattice parameters, chemical composition on the physico-technical preparation conditions of the obtained ZnO films. The conditions were determined to obtain flexible ZnO films with suitable properties to use in the electronic microdevices.
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