Abstract
The motion of electrons in the axial channeling mode in the [100] direction of a Si crystal can be regular and chaotic (depending on the initial conditions). The contribution of regions of regular and chaotic dynamics to the quasiclassical density of energy levels of the transverse motion of electrons is found in this paper. The obtained values are used as parameters of the Berry—Robnik distribution describing the level spacing statistics in the case of the coexistence of regions of regular and chaotic motion.
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