Abstract
Surface morphology and electrical properties of silicon dioxide (SiO2) on 4H-SiC substrates formed by metal-enhanced oxidation (MEO) using barium (Ba) atoms were systematically investigated. It was found that severe surface roughening caused by Ba-MEO can be suppressed by using SiO2 capping prior to MEO. The Ba atoms at the SiO2/SiC interface were found to diffuse to the oxide surface through the deposited SiO2 capping layer, and then the Ba density reduced to ~1014 cm-2 before stable MEO. The resulting SiO2/SiC interface showed the reduced interface state density but the insulating property of the oxides was significantly degraded.
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