Abstract
Research has shown that the morphology control, structure reproducibility and aging represent great problem for porous Si, especially mesoporous and nanoporous silicon applied in gas sensors. Therefore, the development of methods of PSi forming with reproducible structure, and methods of surface treatments of porous silicon, which stabilize PSi properties, is a priority for designers of gas sensors based on porous silicon. Present chapter considers various approaches used for resolving mentioned above problems. Methods of the PSi surface modification aimed to improve gas sensors parameters are also discussed in this chapter. Chapter includes 8 figures, 2 Tables and 70 references.KeywordsPorous SiliconPorous LayerAcetylene MoleculeSurface Transition LayerUndecylenic AcidThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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