Abstract

To meet the need for preparing high-performance nano-optoelectronic devices based on single-layer MoS2, the effects of the heating method (one-step or two-step heating) and the temperature of the MoO3 source on the morphology, size, structure, and layers of an MoS2 crystal grown on a sapphire substrate using chemical vapor deposition are studied in this paper. The results show that MoS2 prepared by two-step heating (the heating of the S source starts when the temperature of the MoO3 source rises to 837 K) is superior over that of one-step heating (MoO3 and S are heated at the same time). One-step heating tends to form a mixture of MoO2 and MoS2. Neither too low nor too high of a heating temperature of MoO3 source is conducive to the formation of MoS2. When the temperature of MoO3 source is in the range of 1073 K to 1098 K, the size of MoS2 increases with the rise in temperature. A uniform large-sized triangle with a side length of 100 μm is obtained when the heating temperature of MoO3 is 1098 K. The triangular MoS2 crystals grown by the two-step heating method have a single-layer structure.

Highlights

  • As the first two-dimensional material discovered, graphene has shown excellent performance in electrical, optical, thermal, and mechanical aspects [1,2,3,4,5]

  • Graphene is a semiconductor without a bandgap, which limits its development in optoelectronic devices

  • Bulk MoS2 is a semiconductor with an indirect bandgap of 1.2 eV

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Summary

Introduction

As the first two-dimensional material discovered, graphene has shown excellent performance in electrical, optical, thermal, and mechanical aspects [1,2,3,4,5]. The intercalation lithium device, which has the advantages of large size and high quality, but with a complicated operation ions method can prepare high-quality single-layer MoS2 materials through controlling the lithium process, high and equipment requirements, low exfoliated efficiency. The liquid ion insertion exfoliated process by anand electrochemical lithium battery device, which phase has the ultrasonography method can prepare a single-layer. Since this method is not advantages of large size and high quality, but with a complicated operation process, high equipment sensitive to water and air, it is suitable for mass the obtained sheet cancan be prepare requirements, and low exfoliated efficiency.

Methods
Growth of MoS2 by Vapor Deposition
Characterization and Test Methods
Effect of Heating Method on the Morphology and Layer Number of MoS2 Crystals
Heating
Dependence
Effect of Temperature on the Morphology and Layer Number of MoS2 Crystals
Dependence ofthe theevaporation evaporation pressure
Structure
Characterization of Photoluminescence Spectra
4.4.Conclusions
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