Abstract
Structure and Hardness Evolution of Silicon Carbide Epitaxial Layers Irradiated with He<sup>+</sup>} Ions
Highlights
Silicon carbide is a material of vital importance in several applications such as nuclear fission and fusion reactor projects, reliable radiation–resistant diagnostic sensors and radiation detectors
Single-crystal standard epitaxial layers with {0001} direction of 8◦ off–axis orientation towards the 1120 of 4H–SiC on SiC substrates obtained from CREE (Durham, USA) were used
Epitaxial layers were implanted with 500 keV He+ ions at room temperature with incident ion beam normal to the substrate plane
Summary
Silicon carbide is a material of vital importance in several applications such as nuclear fission and fusion reactor projects, reliable radiation–resistant diagnostic sensors and radiation detectors. All these applications assume harsh influence of radiation that drastically changes intrinsic physical properties of materials. Fission and transmutation reaction products such as He induces volumetric and tribomechanical properties deterioration that can lead to crucial consequences in such an environmental sensitive field as nuclear energetics
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