Abstract
(1 − x) Ba0.65Sr0.35TiO3–xMgSnO3 (BST–xMgSnO3, x = 0.5, 1, 3, 5, 7 wt%)ceramics sintered at low temperature were prepared by traditional solid-state reaction method and the effect of MgSnO3 doped on the microstructure and dielectric property of BST ceramics sintered at low temperature were investigated by X-ray diffraction, scanning electron microscope, energy dispersive spectroscopy. The results showed that the main phase of BST ceramics doped with MgSnO3 had perovskite structure and a small amount of Mg2TiO4 and Sr2Ti5O12 impurity phase. MgSnO3 doping in BST ceramics sintered at low temperature could shift, pressure and broaden Curie peak remarkably. Dielectric constant (er) decreased firstly and then increased, dielectric loss (tanδ) decreased firstly and then increased and then decreased, withstand voltage (Eb) increased firstly and then decreased and then increased when MgSnO3 doped amount increased. When MgSnO3 doping amount was 1 wt%, BST ceramics sintered at low temperature had better property with er of 2,603, tanδ of 0.006, Eb of 6.3 kV/mm (AC), the sintered temperature was 1,050 °C, the value of △C/C range was 12.5 to −14.8 % in −30 to 85 °C temperature range and the capacitance temperature property was suited for Y5R.
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