Abstract
CoPt alloy films of 40 nm thickness are prepared on MgO(111) substrates with and without Ru(0001) underlayer at 300 °C by radio-frequency magnetron sputtering. CoPt films with the close-packed plane parallel to the substrate surface grow epitaxially on the Ru underlayer as well as on the MgO substrate. Flat surfaces with the arithmetical mean roughness value of 0.2 nm are realized for both films. The crystal structure is determined by considering the atomic stacking sequence of close-packed plane and the order degree. The film formed on MgO substrate consists of an fcc-based L 11 ordered crystal, whereas the film grown on Ru underlayer involves an hcp-based B h ordered crystal in addition to the L 11 ordered crystal. The order degrees of films formed on MgO substrate and Ru underlayer are 0.30 and 0.34, respectively. The L 11 crystal consists of two variants whose stacking sequences of close-packed plane are ABCABC… and ACBACB…, while the B h crystal is a single-crystal with the stacking sequence of ABAB… Formation of B h crystal is promoted on the Ru underlayer. The film formed on Ru underlayer shows a strong perpendicular magnetic anisotropy reflecting the magnetocrystalline anisotropies of L 11 and B h crystals.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
