Abstract
We investigated the structural stability and oxidation resistance of Zr–Al films upon annealing in air. The concentration of Zr was varied from 0 to 100 at.%, with a step of 10 at.%. The films were fabricated using ultra-high vacuum based magnetron sputtering. The as-deposited films with Zr content from 17.3 at.% to 70.7 at.% were found to be X-ray amorphous at room temperature. When exposed to air a thin oxide layer, typically less than 6 nm, is formed. The thickness of the oxide layers increases when the samples are annealed in air and most of these are found to be fully oxidized at 700 °C with the formation of crystalline and amorphous oxides on the top of crystalline and amorphous metal films, respectively. The amorphous oxide layers are found to be dense, with well defined thicknesses. An experimental non-equilibrium phase diagram is provided, covering the whole concentration range of the Zr–Al system.
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