Abstract
The structural properties of Zirconia (ZrO2) and spinel (MgAl2O4) single crystals doped by ion implantation with fission products (Cs and I) were investigated by using the Rutherford backscattering and channeling techniques. The implantation process induces a heavy damage in the various sublattices of the ceramic matrices above a fluence of about 1015 at. cm−2, corresponding to a number of displacements per atom (dpa) of about 1–2. Large values of the Cs and I substitutional fractions, attributed to the formation of impurity-vacancy complexes, are obtained at impurity concentrations lower than 0.5 at.%. The substitutional fraction decreases with increasing implantation fluence. This effect, which is more pronounced for I than for Cs ions, is likely due to precipitation or compound formation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
