Structural properties of compressive strained Ge channels fabricated on Si (111) and Si (100)

Abstract

Structural properties of the strained Ge channels formed on SiGe (111) and SiGe (100) relaxed buffer layers are investigated. Compressive strained Ge(111) channels are grown on reverse graded Si0.26Ge0.74 buffer layers, and as a result, very low rms roughness of 1.7 nm and large compressive strain of −0.92% are obtained. The phosphorous doping is attempted in the SiGe buffer for the purpose of suppression of parallel conduction and very abrupt doping is realized without very little diffusion. The high-quality, doping controlled and largely strained Ge(111) channel/SiGe(111) buffer heterostructure is a promising template for high-performance Ge(111) based devices.