Structural properties of 10 μm thick InN grown on sapphire (0001)

Abstract

Abstract The structural properties of a 10 μm thick In-face InN film, grown on Al 2 O 3 (0001) by radio-frequency plasma-assisted molecular beam epitaxy, were investigated by transmission electron microscopy and high resolution x-ray diffraction. Electron microscopy revealed the presence of threading dislocations of edge, screw and mixed type, and the absence of planar defects. The dislocation density near the InN/sapphire interface was 1.55×10 10 cm −2 , 4.82×10 8 cm −2 and 1.69×10 9 cm −2 for the edge, screw and mixed dislocation types, respectively. Towards the free surface of InN, the density of edge and mixed type dislocations decreased to 4.35×10 9 cm −2 and 1.20×10 9 cm −2 , respectively, while the density of screw dislocations remained constant. Using x-ray diffraction, dislocations with screw component were found to be 1.2×10 9 cm −2 , in good agreement with the electron microscopy results. Comparing electron microscopy results with x-ray diffraction ones, it is suggested that pure edge dislocations are neither completely randomly distributed nor completely piled up in grain boundaries within the InN film.