Abstract
The nanostructured In2O3 thin films were deposited on Si n-type (1 0 0) substrates by reactive thermal evaporation. The structural, morphological, and oxidation states of the films were investigated using x-ray diffraction, scanning electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy. The optical properties of the films were analyzed by UV–vis spectroscopy, Raman spectroscopy, and photoluminescence spectroscopy. The deposited films showed c-In2O3 crystalline nanostructures with a preferred diffraction peak of (2 2 2). The truncated icosahedron shape’s morphology with a transmittance of 85% was observed in the In2O3 thin films. All the deposited indium oxide films have 3+ oxidation states.
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