Abstract
The preparation conditions by PECVD for a-Ge:H with photoelectronic properties approaching those of a-Si:H are described. Emphasis is placed on the identification by TEM, SEM, NMR and other techniques of structural defects on a scale of 1 nm and larger, and their elimination by adjustment of deposition parameters. Evidence concerning the valence and conduction band densities of states is reviewed, and preliminary information on the extension of this approach to improvement of a-Si1−xGex:H alloys examined.
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