Abstract
Zinc oxide (ZnO) film is a promising transparent conductive material suitable for various applications including transparent electrode, piezoelectric transducers, solar radiation protection and sensors. Ga doped ZnO film has excellent electrical properties but has inferiority in terms of optical transmittance, which has prompted investigations and researches on co-doped ZnO film in order to ameliorate its optical and electrical properties. In this study, Ga and F co-doped ZnO (GFZO) film has been prepared on quartz substrates with different F doping concentrations by sol-gel spin-coating method. The structural, optical and electrical properties of GFZO films were investigated using X-ray diffraction, scanning electron microscopy, optical spectroscopy, photoluminescence, and Hall Effect measurement system. Highly c-axis oriented GFZO films were obtained. The crystallinity of GFZO became better with increased of F content. The transmittance and conductivity were improved with increased F doping concentrations. GFZO films with 2 at.% F showed the lowest resistivity and superior transmittance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
