Abstract

Objectives: The aim of this work is to fabricate and analyze the Aluminum Doped ZnO, Copper Oxide CuO and their heterojunction CuO/ZnO:Al using Spin Coating and Rf-Sputtering techniques. Methods: ZnO:Al was synthesized from a sol-gel precursor and deposited on Indium Tin Oxide-coated glass substrate ITO using spin coating. CuO thin films, on the other hand, were elaborated by RF-sputtering. The characterization of both thin films was performed by means of X-ray diffraction, scanning electron microscopy and UV-visible-NIR double beam spectrophotometer. The CuO/ZnO: Al heterojunction was fabricated and characterized using current voltage, capacitance-voltage and conductancevoltage measurements. Findings: The collected results confirm the rectifying nature of the junction with a built-in voltage Vbi of about 1.6 V. Keywords: Copper oxide; Aluminum doped Zinc oxide; RF sputtering; spin coating; heterojunction

Highlights

  • Copper oxide CuO is a p-type semiconductor with a direct optical band-gap (Eg) between 1.51 and 1.74 eV [1]

  • We proposed to synthesize CuO and Aluminum doped ZnO thin films by the two different techniques RF-sputtering and spin coating respectively

  • In order to investigate the effect of doping ZnO by Aluminum and the use of the two last deposition techniques, we studied the structural and optical properties of the elaborated films, and the electrical characteristics of the CuO/ ZnO:Al heterojunctions were measured and discussed

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Summary

Introduction

Copper oxide CuO is a p-type semiconductor with a direct optical band-gap (Eg) between 1.51 and 1.74 eV [1]. It has a high absorption coefficient, which makes it suitable as an absorber in solar cells and in photo-thermal energy conversion. The CuO is widely applied in optoelectronic devices such as thin film transistors [1,2]. This material is very promising in these applications because of its low cost being earth abundand, environmental friendly and nontoxic.

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