Abstract
The behaviour of He-ion produced radiation defects in crystalline silicon near the interface with an amorphous layer formed by ions of chemically active (N) and inert (Ar) implants was studied. The TEM-investigation of the structural modifications in Si along the ion beam direction was carried out by a novel technique. The boundary of an amorphous layer formed by chemically active nitrogen ions was found to work as a useful getter for radiation defects; a property not found after noble-gas implantation.
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