Abstract
Structural modification of the 7 × 7 superstructure buried at the amorphous Si (a-Si)/Si(111) interface during solid phase epitaxial growth of the a-Si overlayer was investigated by transmission electron microscopy (TEM). The intermediate state during the transformation from the 7 × 7 to the 1 × 1 structure (7 × 7 → 1 × 1) was successfully observed by the <110> cross-sectional high resolution TEM. The image variations of the interface superstructure were interpreted using computer image simulation. It was found that unfaulting of the reversed stacking region as well as faulting of the normal stacking region, occurred simultaneously through a modification of the dimer structure during 7 × 7 → 1 × 1. The plan-view transmission electron diffraction patterns observed for the samples annealed at various temperatures were also shown to be consistent with the dimer structure modification. It was confirmed that such 7 × 7 → 1 × 1 proceeded laterally prior to the vertical solid phase epitaxial growth of the a-Si. The mechanism of 7 × 7 → 1 × 1 is discussed.
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