Abstract
In this work, lanthanum doped-bismuth titanate with different contents were successfully prepared by low-temperature combustion synthesis, and subsequently, sintered at 1000 oC for 3 hours. Their structural, microstructural and electrical were systematically studied. It was found that the structural distortion of orthorhombic structure tends to transforms to a tetragonal with the increase in La content. This change is most probably due to relaxations of orthorhombic distortion and octahedral tilting because of the difference in the ionic radius of Bi3+ and La3+. Upon increasing of La content, the grain size remarkable decreases resulted in uniform grain size with better relative density. Thus, the electrical properties of La doping were greatly improved in comparison to pure sample.
Highlights
Lead-free ceramics have been widely studiedfor dielectric materials due to environmental friendly for their less toxicity
The presence of space charge implies that BIT has critical drawbacks such as high leakage current and domain pinning which leads to low dielectric constant and high dielectric loss
The formation of single phase BIT in BLaT regardless of La content was successfully produced after synthesis and sintering
Summary
Lead-free ceramics have been widely studiedfor dielectric materials due to environmental friendly for their less toxicity. Park et al (1999) stated that the oxygen near the Bi ions is likely to be less stable due to the volatility of the Bi ions [4] Defects, such as bismuth vacancies (VBi′′′) and oxygen vacancies (Vo), could exist in the perovskite layers and act as a space charge. The space charge effect can be minimized and subsequently, resulted in high dielectric constant and low dielectric loss. On this basis, an attempt has been made to fabricate BIT with La doping to study their structural, morphological and electrical properties
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