Abstract
GeSe 2 and Ge 28Sb 12Se 60 chalcogenide glass thin films have been deposited on single crystal silicon substrates by vacuum thermal evaporation. The surface morphology of these films has been investigated by field emission-scanning electron microscopy and atomic force microscopy, revealing heterogeneities in their microstructure consisting of granular regions ∼15–50 nm in size, which were coarser in the case of the GeSe 2 films. Typical RMS film surface roughness values were ∼0.9–1.3 nm.
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