Abstract
Epitaxial Fe3O4 thin films are deposited at 400, 500, 600 °C on TiN buffered Si(100) using reactive magnetron sputtering. In-situ reflection high energy electron diffraction confirmed the growth to be two-dimensional (2-D) at 500–600 °C and X-ray reflectivity revealed a sharp interface (∼0.4 nm). Growth temperature effect on structural, electronic, and magnetic behavior was probed by X-ray diffraction, Raman, and magnetization studies. Small value of deformation potential (0.19 eV/Å) and electron phonon coupling constant (0.71), sharp Verwey transition with large jump at 119 K in magnetization during field cooled warming and early saturation at 2.5 kOe affirmed the superior magnetic quality of epitaxial Fe3O4 samples.
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