Abstract
The structural dependence of optical bistability was studied for the In 0.52Al 0.48As/InP type II multiple quantum well diodes grown by gas source molecular beam epitaxy. Two types of optical bistability were observed. One of them shows a sudden increase of light output with increasing injection current, while the other shows a sudden decrease of light output with increasing injection current. The former is considered to be induced by holes tunneling in the valence band, while the latter is considered to be induced by the resonant tunneling effect of electrons in the conduction band.
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