Abstract
High resolution X-ray diffraction (HRXRD) and far-infrared reflectivity techniques were applied to characterize Al x Ga 1− x Sb alloys. Layers of Al x Ga 1− x Sb grown by the liquid phase epitaxy technique and deposited on GaSb (100) substrates were obtained in the temperature range of 250 to 450 °C. From the HRXRD measurements it can be inferred that the films have good structural characteristics, this is because the lattice mismatch values were no bigger than 0.02% and from the rocking curves the Al concentration was ranged from 0.04 to 0.058. The presence of the ternary alloy in the films was confirmed by reflectivity. A change of the conductivity type in the film was observed for films grown at temperatures lower than 350 °C.
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