Structural and thermoelectric properties of nanostructured p-SnO thin films grown by e-beam evaporation method

Abstract

Today, the earnest need for earth-abundant and environmentally friendly thermoelectric materials has revealed the importance of semiconductor metal oxides in order to eliminate the barrier towards their wide-ranging use in industrial applications. In the present work, we demonstrate the synthesis of p-type tin oxide thin films on quartz glass and Si substrates by using electron beam evaporation technique followed by rapid thermal annealing process at 200 °C for 20 min in Ar-atmosphere. Annealing-induced structural, electrical, optical and thermoelectric properties of pristine and annealed SnO thin films are primarily studied. The compositional and structural analysis of SnO films are performed by using X-Ray Diffraction, Scanning Electron Microscope as well as Atomic Force Microscope. Moreover, the mechanism of thermoelectric transportation at different measurement temperatures is deeply inspected via thermoelectric measurements. The Seebeck coefficient, carrier concentration and hole mobility in conjunction with the development of thin film nanostructures are discussed, predominantly. The optimal annealing may tune structural, electro-optic and thermoelectric properties of SnO films for the commercial-level maturity of thermoelectric devices for energy applications. • Synthesis of high quality p-type SnO thin films by e-beam evaporation method. • Phase stability can be achieved by optimal annealing of tin oxide thin films. • Electrical resistivity and mobility affects the thermoelectric properties. • Optimal annealing reduces the crystal imperfections and band-tail states in SnO films. • The air-annealing induces the phase transition in SnO x thin films.