Abstract
Owing to its great potential in optoelectronic devices, structural and surface properties of porous GaN prepared by UV electrochemical etching has been investigated. Scanning electron microscopy (SEM), atomic force microscopy (AFM) and high resolution X-ray diffraction (HR-XRD) phi-scan and rocking curves measurements revealed the nature of the pore morphology and nanostructures. SEM micrograph indicated that the shapes of pores for porous sample are nearly hexagonal. The AFM measurements revealed that the surface roughness increased in the porous sample. X-ray diffraction phi-scan showed that porous GaN sample maintained the epitaxial feature.
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