Abstract
The phase-structural composition of a silica film grown on Si substrate implanted with Zn ions at room temperature with different fluences has been studied using transmission electron microscopy and electron diffraction. The small clusters (1–2 nm) and the large clusters (5–7 nm) have been formed in as-implanted silica films with the Zn concentration of 6–7 at % and 16–18 at %, respectively. Furnace annealing at 750 °С for two hours results both in the formation of the orthorhombic Zn2SiO4 phase (space group R-3) in the case of low fluence (5 · 1016 cm–2) and in the formation of the cubic ZnO phase (space group F-43m) in the case of high fluence (1 · 1017 cm–2). It has been shown that impurity loss during implantation and subsequent annealing increase with fluence of implanted ions. The fraction of Zn atoms in clusters has been estimated to be 15 % and 18 % for fluences (5 · 1016 cm–2) and (1 · 1017 cm–2), respectively. It has been shown that residual Zn impurities dissolved in silica matrix noticeably suppress the light-emitting properties of silica with embedded Zn2SiO4 and ZnO nanocrystals.
Highlights
Российская Федерация 4Научно-практический центр Национальной академии наук Беларуси по материаловедению, Минск, Республика Беларусь 5Центр просвечивающей электронной микроскопии высокого разрешения, Университет Нельсона Манделы, Порт-Элизабет, Южная Африка
The phase-structural composition of a silica film grown on Si substrate implanted with Zn ions at room temperature with different fluences has been studied using transmission electron microscopy and electron diffraction
Electronic structure and photoluminescence properties of Zn-ion implanted silica glass before and after thermal annealing / D
Summary
Российская Федерация 4Научно-практический центр Национальной академии наук Беларуси по материаловедению, Минск, Республика Беларусь 5Центр просвечивающей электронной микроскопии высокого разрешения, Университет Нельсона Манделы, Порт-Элизабет, Южная Африка. Структурные и оптические свойства оксида кремния, имплантированного ИОНАМИ цинкА: влияние степени пересыщения и термообработки Установлено, что потери примеси при имплантации, а также в процессе термообработки увеличиваются с ростом флюенса внедряемых ионов.
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