Abstract
This paper reviews our studies of wurtzite GaN/AlN quantum dots grown by MBE via the Stranski–Krastanow mode. High resolution transmission electron microscopy shows that dots are dislocation free, without any evidence of interdiffusion effects. They form arrays of truncated hexagonal pyramids (height of 4 nm and base diameter of 15 nm), nucleating next to threading dislocations on top of a wetting layer, and exhibiting vertical correlation between different quantum dot layers. The existence of polarization and piezoelectric fields of several MV/cm is demonstrated by photoluminescence and decay time measurements. Nevertheless quantum dots are found to be the most efficient emitters in nitrides at room temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Comptes Rendus de l'Academie des Sciences Series IV Physics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
