Abstract
The surface morphologies, alloy compositions and emission properties of In-richInxGa1−xN nanodots (x≥0.87) grown by metallo-organic chemical vapor deposition at various growth temperatures(550–750 °C) were investigated. We found that the nucleation of InGaN dots was dominated by thesurface migration of In adatoms. A higher Ga content can be achieved at lower growthtemperatures due to the relatively lower migration ability of Ga adatoms. At higher growthtemperatures, the InGaN dots tend to decompose into In-rich islands and a thin Ga-richlayer. These In-rich islands exhibit photoluminescence emission in the near-infrared range.Another visible emission band was also observed for samples grown at higher temperatures.The formation of a thin Ga-rich layer is likely to be responsible for the visible emission.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
