Abstract
The effects of growth temperature on the structural and optical properties of gas-source molecular beam epitaxy grown 0.98 μm InGaAs/InGaAsP strain-compensated multiple quantum well structures were studied by transmission electron microscopy (TEM), double crystal X-ray diffraction and photoluminescence measurements. It was found that high quality of quantum well structures can be obtained at a lower growth temperature. A higher growth temperature caused an immiscible growth for the InGaAsP alloy from the observation of the TEM images. As a result, the optical and structural quality of the quantum well structure was drastically degraded.
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