Abstract
Ultraviolet-assisted photo-electrochemical etching route was performed in acidic electrolytic solutions (sulphuric acid: ethanol, hydrofluoric acid: ethanol, phosphoric acid: ethanol, and phosphoric acid: sulphuric acid: ethanol) for preparation of porous AlInGaN films. A comparison in terms of strain analysis via high resolution X-ray diffraction, surface morphology via field emission scanning electron microscopy, surface topography via atomic force microscopy, band gap calculation via UV–visible absorption and photoluminescence measurements, Urbach energy determination, as well as in-plane biaxial stress relaxation and optical phonon mode determination using Raman spectroscopy has been made. A mechanism leading to the formation of porous structures was proposed, discussed, and illustrated along with schematized energy band structures at the semiconductor/electrolytic solution interface.
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