Abstract
The effects on fluorine incorporation on the structure and optical properties of amorphous hydrogenated silicon carbide films deposited by pulsed glow discharge were investigated. Fluorine is incorporated at the expense of silicon, and films with up to 16 at.% of fluorine were obtained as determined by ion beam analysis. Structural investigation was carried by Raman and infrared spectroscopies. Infrared results showed that incorporation of fluorine occurs in the form of Si–F bonds, and Raman results showed a progressive formation of graphitic agglomerates due to fluorine incorporation in the films. Because of the relatively high bonding energy of Si–F, preferential bonding of fluorine with silicon induces small changes in the optical gap.
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